Post by pigletPost by Mike Monett VE3BTIPost by pigletOr perhaps BJT wired as transdiode (E to C+B) should have low leakage
at low voltage? Two inverse parallel for both directions.
piglet
How would that be any different than having two forward-biased diodes
in parallel? Except the current would be limited to the maximum base
current.
How would it reduce the leakage at low voltages?
The current is limited by maximum collector current rating not base
current.
E-B junction is far better than many PN diodes.
Your term "transdiode" threw me on a wild goose chase.
The term transdiode was used by Patterson in his 1984 patent:
Patterson Transdiode
US4450414A
Inventor Raymond B. Patterson, III
Current Assignee Intersil Corp
High temperature current mirror amplifier
https://patentimages.storage.googleapis.com/14/d7/e1/096a85e0cc0fba/US44504
14.pdf
It is used in Logarithmic Amplifier feedback networks:
Analog Devices Dual Matched NPN Transistor MAT12
Figure 18. Log Conformance Circuit, Page 9 of 12
https://www.farnell.com/datasheets/2178247.pdf
It is not suitable for a voltage clamp across a 25 ohm resistor.
Your description of an E-B junction as better than many PN diodes threw me
for another loop. The base is very thin and not suited for high current. I
could find no datasheet that specified the maximum base current.
What you really meant to say was a diode-connected transistor, which you
describe as E to C+B.
This conducts very little current at 250 millivolts forward voltage. For
example, a 2N2219 conducts only 240 pa, which is negligible in this
application.
For your enjoyment, I include the LTspice files. I checked to make sure
they work in IV and XII, and that there are no line wrap problems. I cannot
verify they will work in 17 since I am running Win7 32 bit and have no
intention of going to 64 bit or MS 10.
SHEET 1 1140 1108
WIRE -736 -704 -864 -704
WIRE -736 -672 -736 -704
WIRE -1008 -624 -1040 -624
WIRE -976 -624 -1008 -624
WIRE -864 -624 -864 -704
WIRE -864 -624 -896 -624
WIRE -800 -624 -864 -624
WIRE -1040 -608 -1040 -624
WIRE -736 -560 -736 -576
WIRE -1040 -512 -1040 -528
FLAG -1008 -624 Vin
FLAG -1040 -512 0
FLAG -736 -560 0
SYMBOL voltage -1040 -624 R0
WINDOW 0 49 39 VRight 2
WINDOW 3 9 56 Right 2
SYMATTR InstName V1
SYMATTR Value 1
SYMATTR Value2 AC 1
SYMATTR SpiceLine Rser=2
SYMBOL npn -800 -672 R0
WINDOW 0 63 29 Left 2
WINDOW 3 56 59 Left 2
SYMATTR InstName Q1
SYMATTR Value 2N2219A
SYMBOL res -992 -608 R270
WINDOW 0 32 56 VTop 2
WINDOW 3 0 56 VBottom 2
SYMATTR InstName R1
SYMATTR Value 500µ
TEXT -1048 -784 Left 2 ;'2N2219 Forward Voltage
TEXT -1024 -744 Left 2 !.dc V1 0 0.25 1m
[DC transfer characteristic]
{
Npanes: 3
Active Pane: 1
{
traces: 1 {303038468,0,"Ic(Q1)"}
X: ('m',0,0,0.03,0.25)
Y[0]: ('p',0,0,2e-011,2.4e-010)
Y[1]: ('_',0,1e+308,0,-1e+308)
Amps: ('p',0,0,0,0,2e-011,2.4e-010)
Log: 0 0 0
GridStyle: 1
},
{
traces: 1 {34603011,0,"Ib(Q1)"}
X: ('m',0,0,0.03,0.25)
Y[0]: ('p',0,0,2e-012,2.6e-011)
Y[1]: ('_',0,1e+308,0,-1e+308)
Amps: ('p',0,0,0,0,2e-012,2.6e-011)
Log: 0 0 0
GridStyle: 1
},
{
traces: 1 {303038466,0,"I(R1)"}
X: ('m',0,0,0.03,0.25)
Y[0]: ('p',0,0,3e-011,2.7e-010)
Y[1]: ('_',0,1e+308,0,-1e+308)
Amps: ('p',0,0,0,0,3e-011,2.7e-010)
Log: 0 0 0
GridStyle: 1
}
}
You are right about diode-connected transistors. An ordinary PN diode such
as the MURS120 conducts 9.5 ua at 250 mv, and would not be suitable in this
application.
--
MRM